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| FDG6308P October 2000 PRELIMINARY FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features * -0.6 A, -20 V. RDS(ON) = 0.40 @ VGS = -4.5 V RDS(ON) = 0.55 @ VGS = -2.5 V RDS(ON) = 0.80 @ VGS = -1.8 V Applications * Battery management * Load switch * Low gate charge * High performance trench technology for extremely low RDS(ON) * Compact industry standard SC70-6 surface mount package S G D D G Pin 1 S 1 or 4 6 or 3 D 5 or 2 G 4 or 1 S G 2 or 5 S D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -20 8 (Note 1) Units V V A W C -0.6 -1.8 0.3 -55 to +150 Power Dissipation for Single Operation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 C/W Package Marking and Ordering Information Device Marking .08 Device FDG6308P Reel Size 7'' Tape width 8mm Quantity 3000 units 2000 Fairchild Semiconductor Corporation FDG6308P Rev B(W) FDG6308P Electrical Characteristics Symbol BVDSS BVDSS ===TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Test Conditions Min -20 Typ Max Units V Off Characteristics Drain-Source Breakdown ID = -250 A VGS = 0 V, Voltage Breakdown Voltage Temperature ID = -250 A, Referenced to 25C Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) -15 -1 -100 100 mV/C A nA nA VGS = -8 V, VGS = 8 V, VDS = 0 V VDS = 0 V ID = -250 A On Characteristics VGS(th) VGS(th) ===TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, -0.4 -0.9 2 0.27 0.36 0.55 0.35 -1.5 V mV/C ID = -250 A, Referenced to 25C VGS = -4.5 V, VGS = -2.5 V, VGS = -1.8 V, VGS = -4.5 V, VGS = -4.5 V, VDS = -5 V, ID = -0.6 A ID = -0.5 A ID = -0.4 A ID = -0.6 A, TJ=125C VDS = -5 V ID = -0.6 A 0.40 0.55 0.80 0.56 ID(on) gFS On-State Drain Current Forward Transconductance -2 2.1 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, V GS = 0 V, f = 1.0 MHz 153 25 9 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = 1 A, VGS = -4.5 V, RGEN = 6 5 15 7 1.6 10 27 14 3.2 2.5 ns ns ns ns nC nC nC VDS = -10 V, ID = -0.6 A, VGS = -4.5 V 1.8 0.3 0.4 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.25 A(Note 2) -0.77 -0.25 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. RJA = 415C/W when mounted on a minimum pad . 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDG6308P Rev B (W) FDG6308P Typical Characteristics 2 -3.0V -2.5V -2.0V 1.2 -1.8V 0.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V -ID, DRAIN CURRENT (A) 1.6 2.5 2.25 2 1.75 1.5 -2.5V 1.25 1 0.75 0 0.5 1 1.5 2 2.5 3 0 0.5 1 -ID, DRAIN CURRENT (A) 1.5 2 -3.0V -3.5V -4.5V -2.0V VGS = -1.8V 0.4 0 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.2 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o ID = -0.6A VGS = -4.5V ID = -0.3 A 1 0.8 0.6 TA = 125oC 0.4 TA = 25oC 0.2 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 2 TA = -55 C 125oC o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 25oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 1.5 VGS = 0V 1 TA = 125oC 25oC 0.01 -55oC 0.001 0.1 1 0.5 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6308P Rev B (W) FDG6308P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -0.6A 4 -15V 3 VDS = -5V -10V CAPACITANCE (pF) 200 CISS 160 f = 1MHz VGS = 0 V 120 2 80 COSS 40 CRSS 1 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 Qg, GATE CHARGE (nC) 0 0 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 30 100s RDS(ON) LIMIT 1 10ms 100ms 0.1 VGS = -4.5V SINGLE PULSE RJA = 415oC/W TA = 25oC 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 1s DC 1ms POWER (W) 18 Figure 8. Capacitance Characteristics. SINGLE PULSE RJA = 415oC/W 24 TA = 25oC -ID, DRAIN CURRENT (A) 12 6 0 0.0001 0.001 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) + RJA RJA = 415 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDG6308P Rev B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1 |
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